MPAS-1100

Microwave Plasma

Assisted Sputtering System

The Main Features

01 Rapidly achieve high-quality vacuum using magnetic levitation molecular pump and deep cryogenic trap, with adjustable opening gate valve of VAT for precise control of reaction chamber pressure.

02 The sputtering chamber is standardly equipped with two types of planar cathode targets, and up to four types of targets can be installed.

03 Plasma is generated by microwave induction, resulting in higher ion density and stronger reactivity, enabling rapid deposition of dielectric films.

04 The device adopts a metal sputtering followed by post-oxidation mode, ensuring stable film deposition rate. The film thickness can be controlled through time, crystal film thickness control, or direct optical film thickness control.

05 Dual target sputtering can be used to produce alloy film intermediate refractive index films, greatly increasing the degree of freedom in designing complex optical film systems.

06 Nitride or oxynitride coatings can be applied, expanding the characteristics of optical thin films.

Specifications

Model MPAS-1100
Vacuum Chamber SUS304, Ø1100mm x 780mm(H)
Workpiece Disk Size 152mm(W)×6mm(T)×555mm(H)×20 pieces
Workpiece Disk Rotation Speed 0rpm ~ 60rpm (Adjustable)
Crystal Film Thickness Meter Two-point crystal probe + crystal thick film controller

Performance

Item Content
Purpose Pressure ≦5.0X10-5Pa
Pump Down Time 1.3X10-3Pa in 30 min.

Utility

Item Content
Equipment Dimensions 2200(W) x 2200mm(D) x 2150mm(H)
Power Supply ≈50KVA
Cooling Water Flow Rate ≧80L / min
Air Pressure 0.5MPa~0.7MPa
Gross Weight ≈2600Kg(Without control cabinet)